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Title | A power supply clamp with self-cutoff the conducted ESD current path mechanism for latch-up free |
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Journal | Solid-State Electronics |
1st Author | Sun Kangming,Meng Liya,Xia Yang |
A power supply clamp with self-cutoff the conducted ESD (electrostatic discharge) current path mechanism for on-chip ESD protection is developed by TCAD simulation and experiments. The proposed clamp consists of SCR (silicon controlled rectifier) acting as ESD protection device between power and ground rail, and control circuit generating cutoff signal. Different from the traditional SCR which increases holding voltage to prevent latch-up, the proposed structure can automatically set block to cut off the conducted SCR after triggered by ESD stress. Simulation analysis and experimental results show that the reported structure presents self-cutoff capability and latch-up free characteristic even under power-on case.
0.18 um CMOS Process
其实从这个TLP数据的测试结果来看,只能说这种结构在面对正常的ESD事件的时候,能正常开启泄放ESD电流。
该器件的设计思想是,SHUT端要一直给出使得SCR器件无法开启的电压,只有当ESD事件来的时候,SHUT端才给出能使得SCR器件开启的电压(一段时间,文中取了280ns),当ESD事件过去后,SHUT端的信号又自动恢复到使得SCR器件无法开启的电压。
一种比较新颖的抗闩锁方式。
这种抗闩锁方式很不错。
标签:[无]
日期:2025-01-20