Well proximity effect(WPE)is caused by scattering of implantions from the resist side-walls during p- or n-well processing ,the result is increasing doping at the edges of active(OD) for both NMOS p-well PMOS n-well formation,Higer Vt therefore results for both NMOS PMOS , Vt decreases with ...
STI Stress Effect (aka Length Of Diffusion or LOD Effect) ,Transistor performance (Vt, Id etc.) can be influenced (through mobility) by distance of poly-gate to diffusion (OD), STI Proximity Effect on the Si is caused by stress from the surrounding STI oxide fill, It was first noticed at the ...
Cadence SKILL是一种基于人工智能语言Lisp的高级交互式编程语言。它允许自定义和扩展设计环境。使用SKILL, 可以 逐步的验证它们在合 并到更大的程序之前。 关于SKILL language更多的信息,请参考 SKILL Language User Guide 中的 Getting Started (入门指南)。 Using SKILL Code Examples 在user manual中,SKILL A ...