日志

WPE(Well Proximity Effect) of 0.13um technology process

已有 2802 次阅读| 2019-12-18 16:27 |个人分类:technology|系统分类:芯片设计

Well proximity effect（WPE）is caused by scattering of implantions from the resist side-walls during p- or n-well processing ，the result is increasing doping at the edges of active(OD) for both NMOS p-well & PMOS n-well formation，Higer Vt therefore results for both NMOS & PMOS , Vt decreases with increasing well spacing follows a 1/x² model , Insignificant WPE is assumed to occur for well edges ≧3 um away from the channel

近井效应(WPE)是在p井或n井处理过程中，由离子注入的散射引起的，结果是在NMOS p-阱和PMOS n-阱的形成都增加了)边缘的掺杂活性(OD)，因此，NMOS和PMOS的Vt值都随着井距的增加而减小，其变化规律为1/x2，无关紧要的WPE假设发生了边缘大于3μm远离沟道

Transistor performance (mainly through Vt) can be influenced by distance of Channel to Well Edge
Well implant ions scatter at edge of PR (also within PR) and end up in channel area of yet to be formed transistor
Results in increased dopant concentration in channel meaning Vt increased. May decrease mobility, and increase body effects as well.

晶体管的性能(主要通过Vt)会受到通道到阱边缘的距离的影响

良好的注入离子散射在PR的边缘(也在PR内)，并最终到达尚未形成的晶体管的沟道区域

结果通道内掺杂物浓度增加，表明Vt增加。可能会降低机动性，也会增加对身体的影响。