DGO:Dual Gate Oxide process TGO:Triple Gate Oxide process As complementary metal oxide semiconductor (CMOS) logic scales down, it needs ultrathin gate oxides and a reduced operating voltage for high performance. At the same time, however, an increasing number of applications require dua ...
Well proximity effect（WPE）is caused by scattering of implantions from the resist side-walls during p- or n-well processing ，the result is increasing doping at the edges of active(OD) for both NMOS p-well PMOS n-well formation，Higer Vt therefore results for both NMOS PMOS , Vt decreases with ...
STI Stress Effect (aka Length Of Diffusion or LOD Effect) ，Transistor performance (Vt, Id etc.) can be influenced (through mobility) by distance of poly-gate to diffusion (OD)， STI Proximity Effect on the Si is caused by stress from the surrounding STI oxide fill， It was first noticed at the ...
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